Shulin, Taiwan

Shang-Sheng Yang

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Portwell Inc.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shang-Sheng Yang. Retrieved from https://idiyas.com/inventor/shang-sheng-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Shang-Sheng Yang

Introduction

Shang-Sheng Yang is a notable inventor based in Shulin, Taiwan. He has made significant contributions to the field of power supply technology. His innovative approach has led to the development of a unique redundant power supply device.

Latest Patents

Yang holds a patent for a redundant power supply device. This device is designed without the need for a heat dissipating fan. It features a chassis with multiple power input and output accommodating spaces. The back panel device includes a printed circuit board mounted onto the chassis. A variety of power supply devices are installed in the power output accommodating spaces and are electrically connected to the back panel. The design allows for high interchangeability and economic benefits, enhancing product competitiveness.

Career Highlights

Shang-Sheng Yang is currently associated with Portwell Inc., where he continues to innovate in the field of power supply solutions. His work focuses on creating devices that improve efficiency and reliability in power management.

Conclusion

Shang-Sheng Yang's contributions to power supply technology exemplify the spirit of innovation. His patented redundant power supply device showcases his commitment to enhancing product performance and competitiveness.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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