Austin, TX, United States of America

Shan Tang

This inventor holds 1 USPTO granted patent. Top assignee: Darpa. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shan Tang. Retrieved from https://idiyas.com/inventor/shan-tang-cje4kki2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovator Spotlight: Shan Tang and His Breakthrough in Flash Memory Technology

Introduction: Shan Tang, an inventive mind based in Austin, TX, has made a noteworthy contribution to the field of flash memory technology. With a background in engineering and materials science, he has developed an innovative method for fabricating flash memory devices utilizing nanoparticles and chaperonin proteins, which holds the promise of enhancing memory device efficiency and performance.

Latest Patents: Shan Tang is credited with a significant patent titled "Nanoparticles in a flash memory using chaperonin proteins." This patent outlines a method for creating a flash memory device that incorporates a uniform distribution of nanoparticles atop a tunnel oxide layer to form a floating gate. The process begins with defining active areas in a substrate and forming an oxide layer, followed by the construction of a self-assembled protein lattice that houses molecular chaperones. These cavities enhance the trapping of nanocrystals, resulting in an ordered nanocrystal lattice after the removal of the protein lattice through high temperature annealing.

Career Highlights: Shan Tang is currently affiliated with DARPA, where his work focuses on pioneering technologies that drive advancements in various technical domains. His career at DARPA is characterized by a commitment to innovation and a passion for exploring the boundaries of flash memory and nanoparticle applications in electronic devices.

Collaborations: Throughout his career, Shan has collaborated with esteemed colleagues such as Chuanbin Mao and Sanjay K Banerjee. These collaborations have allowed him to deepen his research and explore novel avenues in the intersection of nanotechnology and electronic engineering.

Conclusion: Shan Tang represents the innovative spirit of modern inventors, merging scientific inquiry and practical application. His contributions to flash memory technology stand as a testament to the potential of nanotechnology in shaping the future of electronic devices. As advancements in this field continue, the insights and inventions of pioneers like Shan are likely to play an integral role in the evolution of cutting-edge technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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