San Jose, CA, United States of America

Shahab Arabshahi

This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shahab Arabshahi. Retrieved from https://idiyas.com/inventor/shahab-arabshahi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Shahab Arabshahi: Innovator in Semiconductor Processing

Introduction

Shahab Arabshahi is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor processing, particularly in the area of anomaly detection.

Latest Patents

Shahab holds a patent for a method titled "Real-time anomaly detection and classification during semiconductor processing." This innovative method involves executing a wafer recipe in a semiconductor processing system to process a semiconductor wafer. It includes monitoring sensor outputs from sensors that track conditions associated with the semiconductor processing system. The process provides these sensor outputs to models trained to identify faults in the semiconductor wafer. Upon receiving an indication of a fault from at least one of the models, a fault output is generated in response.

Career Highlights

Shahab Arabshahi is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on enhancing the reliability and efficiency of semiconductor manufacturing processes.

Collaborations

One of his notable coworkers is Michael Nichols, with whom he collaborates on various projects within the company.

Conclusion

Shahab Arabshahi's contributions to semiconductor processing through his innovative patent demonstrate his expertise and commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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