Suwon, South Korea

Seungmin Lim

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seungmin Lim. Retrieved from https://idiyas.com/inventor/seungmin-lim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seungmin Lim: Semiconductor Device Innovation

Introduction

Seungmin Lim is an inventor based in Suwon, South Korea. His patent work concerns semiconductor device design and the use of non-oxidizing material in device structures. He is associated with Samsung Electronics.

Latest Patents

Lim is named on one patent, “Semiconductor Device Comprising Non-Oxidizing Material.” The invention describes a semiconductor device with front- and rear-side interconnection structures, an active pattern, a gate structure, and source/drain regions. It specifies non-oxidizing material in a target region and at a higher concentration in a rear interconnection region. The material is injected during a high-pressure heat-treatment process. Lim’s reported portfolio includes 1 patent.

Career Highlights

The available information identifies Lim’s work at Samsung Electronics and his contribution to semiconductor technology. His patent focuses on material placement and concentration within different regions of a semiconductor device.

Collaborations

Jinnam Kim and Jongmin Baek are listed as Lim’s coworkers. The provided information does not specify their roles in the patent or whether they collaborated on this invention.

Conclusion

Seungmin Lim’s documented patent work at Samsung Electronics addresses semiconductor device architecture and the application of non-oxidizing material through high-pressure heat treatment.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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