Suwon-si, South Korea

Seungjoon Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seungjoon Hwang. Retrieved from https://idiyas.com/inventor/seungjoon-hwang-0fol2h2k

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seungjoon Hwang and Overheating Protection for Cordless Vacuum Cleaners.

Introduction

Seungjoon Hwang is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. His patent work includes a cordless vacuum cleaner design that incorporates overheating protection during charging.

Latest Patents

Hwang is credited with 1 patent: “Cordless Vacuum Cleaner Adopting Overheating Protection Method.” The invention describes a cleaner main body with a battery and processor, alongside a charging station equipped with a power conversion device and charging terminal. A temperature sensor near the terminal works with a divider resistor to provide a voltage signal. The station’s processor uses that signal to determine whether the temperature exceeds a threshold and, when necessary, performs an overheating prevention operation.

Career Highlights

Hwang’s listed patent reflects work on battery charging safety for cordless cleaning appliances. The design uses temperature monitoring and processor-controlled protection to address overheating risks at the charging terminal.

Collaborations

Hwang’s listed coworkers include Hyeongjun Kim and Minji Kim. The available information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Seungjoon Hwang’s patent focuses on a practical safety feature for cordless vacuum cleaner charging, combining temperature sensing with automated overheating protection.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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