Cedar Hills, UT, United States of America

Seunghyun Kim

This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 2009-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seunghyun Kim. Retrieved from https://idiyas.com/inventor/seunghyun-kim-ppw4bbkt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal2 out of 834,570 
Other
 patents

Years Active: 2009-2011

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Seunghyun Kim: Innovator in Planar Circuit Technology

Introduction

Seunghyun Kim is a notable inventor based in Cedar Hills, Utah. He has made significant contributions to the field of planar circuit technology, holding two patents that showcase his innovative approach to circuit design.

Latest Patents

His latest patents include "Shared Slab AWG Circuits and Systems" and "Ultra-Compact Planar AWG Circuits and Systems." The first patent discloses planar AWG circuits and systems that utilize air trench bends and shared MMI slabs to enhance the compactness of planar circuits. The second patent also focuses on increasing planar circuit compactness through the use of air trench bends.

Career Highlights

Seunghyun Kim has established himself as a key figure in the development of advanced circuit technologies. His work has contributed to the evolution of more efficient and compact circuit designs, which are essential in various applications.

Collaborations

He has collaborated with notable colleagues such as Gregory P. Nordin and Yongbin Lin, further enhancing the impact of his work in the field.

Conclusion

Seunghyun Kim's innovative patents and collaborative efforts highlight his significant role in advancing planar circuit technology. His contributions continue to influence the industry and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…