Sejong, South Korea

Seunghun Chae

This inventor holds 3 USPTO granted patents and 4 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seunghun Chae. Retrieved from https://idiyas.com/inventor/seunghun-chae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 3.6

ph-index = 1


Company Filing History:


Years Active: 2022-2026

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3 patents (USPTO):Explore Patents

Title: Seunghun Chae: Innovator in Semiconductor Technology

Introduction

Seunghun Chae is a prominent inventor based in Sejong-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Seunghun Chae holds 1 patent for a semiconductor package and method of manufacturing the same. This patent describes a semiconductor package that includes a redistribution substrate with first and second surfaces. It features an insulating member and multiple redistribution layers that are electrically connected. The design incorporates under bump metallurgy (UBM) pads and a dummy pattern, enhancing the functionality and efficiency of semiconductor devices.

Career Highlights

Seunghun Chae is associated with Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in advancing semiconductor packaging technologies.

Collaborations

He has collaborated with notable coworkers, including Youngkwan Seo and Jaeean Lee, contributing to various projects within the company.

Conclusion

Seunghun Chae's innovative work in semiconductor technology exemplifies the importance of research and development in the tech industry. His contributions continue to influence advancements in semiconductor packaging.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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