Seungcheol Chae

Title: Seungcheol Chae and Integrated Circuit Manufacturing

Introduction

Seungcheol Chae is an inventor associated with Suwon-si, South Korea. His patent work addresses a method for manufacturing integrated circuit devices, with a focus on processing hafnium oxide films.

Latest Patents

Chae is credited with 1 patent: “Method of Manufacturing Integrated Circuit Device.” The method forms a hafnium oxide film on a substrate and partially etches it through repeated dry and wet treatments. During the dry treatment, the film is exposed isotropically to a gas mixture containing a halogen-containing gas and a hydrogen-containing catalytic gas, without applying plasma to the substrate. This changes components in a surface region of the film. An acidic solution is then used in the wet treatment to remove at least part of that altered region.

Career Highlights

The provided career information associates Chae with Samsung Electronics Ltd. and T.e.s., Inc. His patent describes a process for controlling the partial etching of hafnium oxide, a material used in integrated circuit manufacturing.

Collaborations

Joonyoung Kim is identified as Chae’s coworker. The available information does not specify their particular projects or the nature of their collaboration.

Conclusion

Seungcheol Chae’s documented invention presents a repeated dry-and-wet treatment approach to partially etching hafnium oxide films for integrated circuit device manufacturing.