Suwon-si, South Korea

Seungbeom Ko

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seungbeom Ko. Retrieved from https://idiyas.com/inventor/seungbeom-ko

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seungbeom Ko: Inventor in Nonvolatile Memory Technology

Introduction

Seungbeom Ko is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. The supplied information credits him with 1 patent.

Latest Patents

Ko is named on the patent “Nonvolatile Memory Device and Electronic System Including the Same.” The invention describes a nonvolatile memory device with a substrate divided into memory-cell and connection regions. Its structure includes alternating gate electrodes and insulating layers, a channel structure through the memory-cell region, and a cell contact in the connection region connected to one gate electrode but electrically isolated from another. Support structures surround the cell contact, while a dam structure and insulating ring separate it from the other gate electrode.

Career Highlights

Ko’s listed patent concerns the structure and electrical isolation of components in a nonvolatile memory device. The supplied information associates his work with Samsung Electronics Ltd.

Collaborations

Changjin Son and Chadong Yeo are identified as Ko’s coworkers. The supplied information does not specify their roles in the patent.

Conclusion

Seungbeom Ko’s listed invention addresses structural features of nonvolatile memory devices, including cell contacts, support structures, and electrical isolation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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