Seoul, South Korea

Seung Oun Kang

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 2002.


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Seung Oun Kang: Innovator in Nanocrystal Fabrication

Introduction

Seung Oun Kang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of nanotechnology, particularly in the fabrication of nanocrystals. His innovative methods have the potential to revolutionize the development of next-generation memory devices.

Latest Patents

Kang holds a patent for a "Fabrication method of nanocrystals using a focused-ion beam." This method involves preparing a substrate with a metal or semiconductor film. A focused-ion beam is then irradiated onto various positions on the surface, allowing for the formation of nano-crystals. The process enables the creation of nano-crystals sized a few nanometers or less, which can restrain thermal fluctuations at room temperature. This advancement paves the way for the fabrication of tunneling transistors that can operate effectively at room temperature. Furthermore, his invention significantly contributes to the development of ultra-high-density memory devices with memory capacitance at the terabyte level or more.

Career Highlights

Seung Oun Kang is affiliated with the Korea Institute of Science and Technology, where he continues to push the boundaries of research in nanotechnology. His work has garnered attention for its practical applications in electronics and memory storage.

Collaborations

Kang has collaborated with notable colleagues, including Eun Kyu Kim and Young Ju Park, to further enhance the research and development of nanocrystal technologies.

Conclusion

Seung Oun Kang's innovative approach to nanocrystal fabrication represents a significant leap forward in nanotechnology. His contributions are poised to impact the future of electronic devices and memory storage solutions.

Profile summary based on public USPTO records.
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