Seung Hoon Yi

Title: Seung Hoon Yi: Inventor of an LDO Regulator Circuit

Introduction

Seung Hoon Yi is an inventor based in Seoul, South Korea, associated with Soongsil University. His patent work addresses circuit design for reducing supply-voltage noise in low-dropout (LDO) regulators.

Latest Patents

Yi is associated with 1 patent: “LDO Regulator Circuit Apparatus Capable of Attenuating Supply Voltage Noise.” The invention describes an LDO regulator that uses a flipped voltage follower regulator circuit with a pass transistor to adjust the supply voltage and produce an output voltage. An error-amplifying circuit compares a reference signal with feedback from the output. A common-gate circuit amplifies the feedback-loop gain, while a super source follower buffers the common-gate output and sends it to the pass transistor’s gate. Together, these circuit elements are designed to attenuate supply-voltage noise.

Career Highlights

Yi’s documented patent contribution focuses on improving LDO regulator performance through circuit architecture intended to suppress supply-voltage noise. His association with Soongsil University connects this work to an academic institution.

Collaborations

The provided information identifies Young Ha Hwang and Hee Cheol Joo as Yi’s coworkers. It does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Seung Hoon Yi’s patent describes a noise-attenuation approach for LDO regulators, combining feedback amplification and buffering techniques in a circuit associated with his work at Soongsil University.