Location History:
- Kyungki-do, KR (2005)
- Gyeonggi-do, KR (2009)
- Hwaseong-si, KR (2010 - 2011)
Company Filing History:
Years Active: 2005-2011
Title: Seung-Bum Ko: Innovator in Semiconductor Technology
Introduction
Seung-Bum Ko is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and reliability of semiconductor memory devices.
Latest Patents
One of his latest patents is a semiconductor memory device capable of preventing damage to a bitline during a data masking operation. This invention includes a memory cell array with multiple memory cells connected to word lines and bit line pairs. It features a bit line selection circuit that transmits data between a selected bit line pair and a local input/output line pair, along with a controller that manages the operation based on external signals.
Another notable patent is the CAS latency circuit and semiconductor memory device that includes the same. This invention provides a column address strobe (CAS) latency circuit that generates a stable latency signal in high-speed semiconductor memory devices. The circuit comprises an internal read command signal generator and a latency clock generator, ensuring reliable performance in data processing.
Career Highlights
Seung-Bum Ko is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced semiconductor solutions.
Collaborations
Throughout his career, Seung-Bum Ko has collaborated with talented individuals such as Byung-Hoon Jeong and Han-Gyun Jung. These collaborations have contributed to the innovative advancements in semiconductor technology.
Conclusion
Seung-Bum Ko's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a significant inventor in the field. His innovations continue to impact the performance and reliability of memory devices in the technology industry.