Suwon, South Korea

Seula Park

This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seula Park. Retrieved from https://idiyas.com/inventor/seula-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Seula Park: Multilayered Capacitor Inventor

Introduction

Seula Park is an inventor based in Suwon, South Korea. His patent work focuses on multilayered capacitor technology, and he is associated with Samsung Electro-Mechanics. The provided information lists 3 patents for Park.

Latest Patents

Park’s recent patent work includes two inventions titled “Multilayered Capacitor.”

One describes a capacitor body containing a dielectric layer and an internal electrode, with a metal oxide layer positioned between them. An external electrode is located outside the capacitor body.

The other describes a capacitor with dielectric grains and grain boundaries, where a grain boundary includes tin (Sn). Its internal electrode includes a compound specified by a chemical formula in the patent disclosure, and an external electrode is positioned outside the capacitor body.

Career Highlights

Park’s listed inventions address the structure and materials of multilayered capacitors. His work at Samsung Electro-Mechanics is associated with this area of electronic component technology.

Collaborations

The provided information names Youngjoon Oh and Hyunwoong Na as Park’s coworkers. It does not specify whether they collaborated with him on these particular patents.

Conclusion

Seula Park’s listed patent portfolio highlights his contributions to multilayered capacitor designs, including innovations in dielectric structures, grain boundaries, and electrode materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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