Suwon-si, South Korea

Seul Gi Yun

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seul Gi Yun. Retrieved from https://idiyas.com/inventor/seul-gi-yun-5mb39bt9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seul Gi Yun: Innovator in Semiconductor Fabrication

Introduction

Seul Gi Yun is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for fabricating semiconductor devices.

Latest Patents

Seul Gi Yun holds 1 patent for his invention titled "Method for fabricating a semiconductor device." This method involves providing a substrate with defined regions and forming active patterns that extend in a specific direction. The process includes the formation of gate insulating layers and multiple gate electrodes, each with distinct layer compositions, tailored for different regions of the substrate.

Career Highlights

Seul Gi Yun is currently employed at Samsung Electronics Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation. His contributions are vital to the advancement of semiconductor fabrication techniques.

Collaborations

Seul Gi Yun has collaborated with talented coworkers, including Ju Youn Kim and Myung Soo Seo. These collaborations have fostered a creative environment that enhances innovation and problem-solving in their projects.

Conclusion

Seul Gi Yun's work in semiconductor fabrication exemplifies the spirit of innovation in technology. His contributions continue to impact the industry positively, showcasing the importance of inventive minds in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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