This inventor holds 1 USPTO granted patent. Top assignee: Nanogan Limited. Active years: 2011.
Company Filing History:
Years Active: 2011
Title: Sergey Igorevich Stepanov: Innovator in Semiconductor Technology
Introduction
Sergey Igorevich Stepanov is a notable inventor based in St. Petersburg, Russia. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-quality compound semiconductor materials. His innovative approaches have garnered attention in the scientific community.
Latest Patents
Stepanov holds a patent for a deposition technique aimed at producing high-quality compound semiconductor materials. The patent describes a specific hydride vapor phase epitaxy deposition procedure. This method utilizes a vertical growth cell structure with an extended diffusion layer, a homogenizing diaphragm, sidewall purging gases, and independent gas and substrate heaters. The gas flow is uniformly mixed through the extended diffusion layer and directed to contact the full surface of the substrate, resulting in high-quality and uniform films. The configuration allows for easy scaling from a single wafer to a multi-wafer system, facilitating quick switching between different reactive gas precursors to minimize defects in the deposited materials.
Career Highlights
Sergey Stepanov is associated with Nanogan Limited, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of compound semiconductor materials, which are crucial for various electronic applications.
Collaborations
One of his notable collaborators is Wang Nang Wang, with whom he has worked on various projects related to semiconductor innovations.
Conclusion
Sergey Igorevich Stepanov's contributions to semiconductor technology through his innovative deposition techniques highlight his role as a key inventor in the field. His work continues to influence advancements in high-quality compound semiconductor materials.