Company Filing History:
Years Active: 2025
Title: Innovations by Seongjun Park in Memory Device Technology
Introduction
Seongjun Park is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory device technology, holding 2 patents that showcase his innovative approach to non-volatile memory solutions.
Latest Patents
One of his latest patents is an eFuse OTP memory device that includes serial interface logic and an operation method. This eFuse one-time programmable (OTP) memory features an eFuse intellectual property (IP) designed for one-time writing and multiple readings across various memory cells. The device incorporates a serial interface (SI) logic that receives a clock signal and a trim signal from a master device, facilitating data writing and reading based on these signals. The trim signal consists of a start signal, a mode signal for either write or read mode, and control signals for reading or writing at multiple addresses corresponding to the memory cells.
Another significant patent by Seongjun Park is a non-volatile memory device that utilizes a fuse type memory cell array. This memory device comprises an eFuse cell array where unit cells of different types are alternately arranged. Each unit cell includes a PN diode, a first NMOS transistor, and a fuse. The first and second type unit cells are interconnected through a common node and are symmetrically structured around this node.
Career Highlights
Seongjun Park is currently employed at Sk Keyfoundry Inc., where he continues to develop innovative memory technologies. His work has positioned him as a key player in the advancement of memory device solutions.
Collaborations
He collaborates with talented coworkers, including Keesik Ahn and Soyeon Kim, contributing to a dynamic and innovative work environment.
Conclusion
Seongjun Park's contributions to memory device technology through his patents reflect his expertise and innovative spirit. His work continues to influence the field and pave the way for future advancements in memory solutions.