Hwaseong, South Korea

Seonghyeong Choi

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seonghyeong Choi. Retrieved from https://idiyas.com/inventor/seonghyeong-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Innovations by Seonghyeong Choi

Introduction

Seonghyeong Choi is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of storage devices, particularly through his innovative patent that enhances the efficiency of memory controllers.

Latest Patents

Choi holds a patent for a storage device and its operating method. This invention includes a memory controller equipped with a neural processing unit (NPU), a first nonvolatile memory (NVM) connected through a first channel, and a second NVM connected through a second channel. The first NVM stores first weight data for the NPU, while the second NVM stores second weight data. The memory controller is designed to determine which channel is less frequently accessed when it receives an inference request from the neural processor, allowing it to access the corresponding weight data efficiently.

Career Highlights

Seonghyeong Choi is currently employed at Samsung Electronics Co., Ltd., a leading technology company known for its innovative products and solutions. His work focuses on advancing storage technology, which is crucial for enhancing the performance of electronic devices.

Collaborations

Throughout his career, Choi has collaborated with talented colleagues, including Hyejeong So and Changkyu Seol. These collaborations have contributed to the development of cutting-edge technologies in the field of memory and storage solutions.

Conclusion

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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