Gyeonggi-do, South Korea

Seon Yong Cha

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Skhynix Inc.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seon Yong Cha. Retrieved from https://idiyas.com/inventor/seon-yong-cha-nvi4650e

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Seon Yong Cha: Innovator in Memory Technology

Seon Yong Cha is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of memory technology, particularly with his innovative designs and concepts.

Latest Patents

Seon Yong Cha holds a patent for a memory cell and memory device. This invention includes a substrate, an active layer that is spaced apart from the substrate's surface, and a bit line coupled to one side of the active layer. The design also features a capacitor that is spaced apart from the substrate and a word line that is vertically spaced apart from the active layer. The word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other, showcasing a unique approach to memory cell architecture.

Career Highlights

Seon Yong Cha is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work focuses on advancing memory technologies, which are crucial for modern computing and electronic devices.

Collaborations

He has collaborated with notable colleagues such as Seung Hwan Kim and Dong Sun Sheen, contributing to various projects that enhance memory device performance and efficiency.

Conclusion

Seon Yong Cha's innovative work in memory technology exemplifies the importance of creativity and collaboration in advancing the field. His contributions continue to impact the development of efficient memory devices in the technology sector.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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