Xiamen, China

Senlin Li

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Xiamen Silan Advanced Compound Semiconductor Co., Ltd. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Senlin Li. Retrieved from https://idiyas.com/inventor/senlin-li-wof2xpt1

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Senlin Li and Semiconductor Light-Emitting Innovation.

Introduction

Senlin Li is an inventor associated with Xiamen, China, and Xiamen Silan Advanced Compound Semiconductor Co., Ltd. His patent work includes a semiconductor light-emitting element designed to improve device performance.

Latest Patents

The supplied information lists 1 patent for Senlin Li: “Semiconductor Light Emitting Element and Manufacture Method Thereof.” The invention describes a device built from a substrate, an n-type semiconductor layer, a quantum well layer, and a p-type semiconductor layer. It also incorporates surface-plasmon-related layers in specified positions within or above the semiconductor structure. The patent describes these arrangements as a way to improve quantum efficiency, light-emission uniformity, and resistance to electrostatic discharge.

Career Highlights

Li’s listed patent reflects work on semiconductor device design and manufacturing methods. His company, Xiamen Silan Advanced Compound Semiconductor Co., Ltd., is associated with the invention.

Collaborations

The supplied information identifies Jinjian Zheng and Moran Gao as Li’s coworkers. It does not specify their roles in the patent or the invention.

Conclusion

Senlin Li’s listed patent focuses on surface-plasmon layer arrangements intended to enhance the efficiency, uniformity, and electrostatic-discharge resilience of semiconductor light-emitting elements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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