Yongin, South Korea

Seihwan Ahn

This inventor holds 1 USPTO granted patent and 29 published patent applications and 3 EPO patents. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seihwan Ahn. Retrieved from https://idiyas.com/inventor/seihwan-ahn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Seihwan Ahn - Innovator at Samsung Display Co., Ltd.

Introduction: Seihwan Ahn is an accomplished inventor based in Yongin-si, South Korea. He is currently associated with Samsung Display Co., Ltd., where he contributes to advancements in display technology. Although he has not yet been granted any patents, his work is significant in the field of light-emitting devices.

Latest Patent Applications: Seihwan Ahn's latest patent applications include "LIGHT-EMITTING DEVICE INCLUDING ORGANOMETALLIC COMPOUND, ELECTRONIC APPARATUS INCLUDING THE LIGHT-EMITTING DEVICE, AND THE ORGANOMETALLIC COMPOUND." This application provides embodiments of an organometallic compound, a light-emitting device that incorporates this compound, and an electronic apparatus that utilizes the light-emitting device. The light-emitting device features a first electrode, a second electrode facing the first electrode, and an interlayer that includes an emission layer along with the organometallic compound.

Conclusion: Seihwan Ahn is a promising inventor whose contributions to Samsung Display Co., Ltd. and the field of light-emitting devices are noteworthy. His innovative applications reflect his commitment to advancing technology in the display industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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