Daejeon, South Korea

Segi Byun

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Segi Byun. Retrieved from https://idiyas.com/inventor/segi-byun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Segi Byun: Innovator in Photoelectrode Technology

Introduction

Segi Byun is a notable inventor based in Daejeon, South Korea. He has made significant contributions to the field of photoelectrochemical cells through his innovative work on photoelectrodes. His research focuses on enhancing the efficiency and functionality of these devices.

Latest Patents

Segi Byun holds a patent for a "Photoelectrode including catalyst retaining layer, method of preparing the same, and photoelectrochemical cell including photoelectrode." This patent addresses the development of a photoelectrode that incorporates a catalyst retaining layer, which is crucial for improving the performance of photoelectrochemical cells.

Career Highlights

Segi Byun is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to advance research in photoelectrode technology. His work has garnered attention for its potential applications in renewable energy and sustainable technologies.

Collaborations

Some of his notable coworkers include Byungha Shin and Bonhyeong Koo, who contribute to the collaborative research efforts at the institute.

Conclusion

Segi Byun's innovative work in photoelectrode technology exemplifies the importance of research in advancing sustainable energy solutions. His contributions are paving the way for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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