Seenivasan Subramaniam

Title: Innovations by Seenivasan Subramaniam

Introduction

Seenivasan Subramaniam is a notable inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of Static Random Access Memory (SRAM) cells. His innovative approach to SRAM design has implications for the efficiency and scalability of memory technology.

Latest Patents

Seenivasan holds a patent for "SRAM with P-type access transistors and complementary field-effect transistor technology." This invention relates to the scaling of SRAM cells, which include nMOS transistors positioned above pMOS transistors. The design allows for overlapping footprints of transistors to save space, enhancing the overall efficiency of the SRAM cell. By utilizing pMOS access transistors instead of nMOS, the design reuses areas that would typically be occupied by nMOS access transistors. This innovative approach also incorporates gate interconnects in overlapping areas, further optimizing space utilization.

Career Highlights

Seenivasan Subramaniam is currently employed at Intel Corporation, where he continues to push the boundaries of memory technology. His work has been instrumental in advancing the design and functionality of SRAM cells, contributing to the overall performance of semiconductor devices.

Collaborations

Throughout his career, Seenivasan has collaborated with esteemed colleagues such as Charles Augustine and Patrick R Morrow. These collaborations have fostered an environment of innovation and have led to significant advancements in the field.

Conclusion

Seenivasan Subramaniam's contributions to SRAM technology exemplify the importance of innovation in the semiconductor industry. His work not only enhances memory efficiency but also paves the way for future advancements in technology.