Company Filing History:
Years Active: 2016
Title: Inventor Spotlight: Sebastien Martinie
Introduction
Sebastien Martinie is a noteworthy inventor based in Saint Martin le Vinoux, France. With a focus on semiconductor technology, he has made significant contributions to the field of double gate transistors, holding one patent that highlights his expertise.
Latest Patents
Sebastien Martinie holds a patent entitled "Computer Implemented Method for Calculating a Charge Density at a Gate Interface of a Double Gate Transistor." This innovative method involves calculating the charge density at the first gate of a double gate transistor, which features a thin body and both a first and a second gate interface. Utilizing a physical processor, his method begins with determining an initial estimate of the charge density. Subsequently, at least two basic corrections are performed on this estimate, leveraging a Taylor development of a function designed to approach the correct value of the charge density.
Career Highlights
Sebastien is associated with the Commissariat à l'énergie atomique et aux énergies alternatives, a prominent organization dedicated to energy research and development. His work at this institution allows him to participate in cutting-edge projects and collaborations, advancing the field of energy and technology.
Collaborations
During his career, Sebastien has worked alongside distinguished colleagues, including Thierry Poiroux and Marie-Anne Jaud. Together, they contribute to innovative solutions and push the boundaries of technology in their respective fields.
Conclusion
Sebastien Martinie exemplifies the spirit of innovation in the semiconductor industry. His patent for calculating charge density in double gate transistors is a testament to his technical skills and dedication to advancing technology. Through his work and collaborations, he continues to influence the future of energy and semiconductor research.