The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Jul. 16, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Thierry Poiroux, Voiron, FR;
Marie-Anne Jaud, Claix, FR;
Sebastien Martinie, Saint Martin le Vinoux, FR;
Olivier Rozeau, Moirans, FR;
Abstract
A computer implemented method for calculating a charge density qof a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate qof the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function f(q) able to be nullified by a correct value of the charge density qof the first gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile