This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 2005.
Company Filing History:
Years Active: 2005
Title: Innovations by Sebastien Edme in Electrical Substrate Processing
Introduction
Sebastien Edme is an accomplished inventor based in Wissembourg, France. He has made significant contributions to the field of electrical substrate processing, particularly through his innovative use of laser technology. His work has implications for various applications in the electronics industry.
Latest Patents
Sebastien Edme holds a patent for an "Arrangement and method for processing electrical substrates using lasers." This patent describes a method for processing electric circuit substrates using a diode-pumped, quality-controlled, pulsed solid-state laser. The laser can emit radiation with wavelengths ranging from 266 nm to 1064 nm, with a pulse repetition rate between 1 kHz and 1 MHz and a pulse length of 30 ns to 200 ns. The average laser power can vary between 1 W and around 5 W. The system allows for pre-specified operating modes to be set via a controller, enabling different combinations of laser power and repetition rate for various applications, including drilling, etch removal, and exposure operations.
Career Highlights
Sebastien Edme is currently employed at Siemens Aktiengesellschaft, where he continues to develop and refine his innovative technologies. His work at Siemens has allowed him to collaborate with leading experts in the field and contribute to cutting-edge projects.
Collaborations
Sebastien has worked alongside notable colleagues such as Stefan Lesjak and Eddy Roelants. Their combined expertise has fostered a collaborative environment that enhances the development of innovative solutions in electrical substrate processing.
Conclusion
Sebastien Edme's contributions to the field of electrical substrate processing through his patented laser technology exemplify the impact of innovation in the electronics industry. His work continues to influence advancements in this critical area.
