Ostfildern, Germany

Sebastian Hampsch

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Walter Ag. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sebastian Hampsch. Retrieved from https://idiyas.com/inventor/sebastian-hampsch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


 

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Sebastian Hampsch: Innovator in Cutting Tool Technology

Introduction

Sebastian Hampsch is a notable inventor based in Ostfildern, Germany. He has made significant contributions to the field of cutting tool technology, particularly with his innovative designs that enhance tool performance and longevity.

Latest Patents

Hampsch holds a patent for a cutting tool with a wear-recognition layer. This tool features an optional wear-protection coating and includes a single-layer or multilayer wear-recognition layer. The layers are produced by depositing elemental metals, metal alloys, or electrically conductive metal compounds using a PVD process. The design incorporates at least two different metals in the wear-recognition layer, which is produced through anodic oxidation to improve its functionality.

Career Highlights

Sebastian Hampsch is associated with Walter AG, a company known for its expertise in cutting tools and machining solutions. His work has contributed to advancements in tool technology, making significant impacts in various industrial applications.

Collaborations

Hampsch collaborates with Veit Schier, working together to push the boundaries of cutting tool innovation.

Conclusion

Sebastian Hampsch's contributions to cutting tool technology exemplify the importance of innovation in enhancing industrial efficiency. His patented designs reflect a commitment to advancing the field and improving tool performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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