Company Filing History:
Years Active: 2017-2019
Title: Innovations of Sean M Dillon
Introduction
Sean M Dillon is an accomplished inventor based in Fishkill, NY (US). He has made significant contributions to the field of materials science, particularly in the area of crystalline regrowth. With a total of 2 patents, Dillon's work has the potential to impact various technological applications.
Latest Patents
Dillon's latest patents focus on methods to improve crystalline regrowth. One of his notable inventions involves inhibiting the migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap. This is achieved by forming a conductive barrier at the interface between the layers. The barrier can be created by implanting carbon impurities or depositing a Si:C layer that inhibits dislocation movement across the barrier layer. Additionally, a passivation layer can be formed by annealing in vacuum prior to the deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si. Furthermore, Dillon's methods include implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.
Career Highlights
Sean M Dillon is currently employed at GlobalFoundries Inc., where he continues to innovate and develop new technologies. His work is instrumental in advancing the capabilities of semiconductor manufacturing and materials engineering.
Collaborations
Dillon collaborates with talented individuals such as Yun Yu Wang and Oh-Jung Kwon, contributing to a dynamic research environment that fosters innovation.
Conclusion
Sean M Dillon's contributions to the field of crystalline regrowth and semiconductor technology highlight his role as a significant inventor. His innovative methods and collaborative efforts continue to push the boundaries of materials science.