This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2021
Title: Innovator Profile: Se-Won Yun
Introduction: Se-Won Yun is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of non-volatile memory technology. As an inventor at Samsung Electronics Co., Ltd., Yun's groundbreaking work has garnered attention and respect within the industry.
Latest Patents: Se-Won Yun is credited with one notable patent: "Non-volatile memory devices having enhanced erase control circuits therein." This innovative memory device features an array of vertical NAND strings composed of nonvolatile memory cells built on an underlying substrate. The invention includes an advanced erase control circuit designed to manage the erasure process of these memory cells effectively. The circuit drives multiple bit lines connected to these NAND strings with unique erase voltages during the erase operation, allowing for a more controlled and efficient erasure process.
Career Highlights: Yun’s career at Samsung Electronics Co., Ltd. has been marked by his commitment to innovation and the development of advanced memory technologies. His work not only reflects his technical expertise but also his ability to address challenges in memory design effectively.
Collaborations: Throughout his career, Se-Won Yun has collaborated with notable professionals in the field, including coworkers Jin-Young Kim and Il-Han Park. These collaborations have contributed to the successful development and enhancement of memory technologies within their company.
Conclusion: Se-Won Yun stands out as an inventive force within Samsung Electronics. His patent for memory devices with enhanced erase control circuits showcases his ingenuity and commitment to pushing the boundaries of technology. As advancements in memory technology continue to evolve, Yun's contributions will likely play a crucial role in shaping the future of non-volatile memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
