Yongin, South Korea

Se Hwan Moon

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Samsung Sdi Co., Inc.. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Se Hwan Moon. Retrieved from https://idiyas.com/inventor/se-hwan-moon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Se Hwan Moon: Innovator in Battery Technology

Introduction

Se Hwan Moon is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of battery technology, particularly in the area of defect screening devices. His innovative approach has the potential to enhance the reliability and safety of battery systems.

Latest Patents

Se Hwan Moon holds a patent for a "Battery defect screening device and method." This device includes a battery fixer for securing a battery, a discharger, a charger, and a voltmeter for measuring various voltage values. The defect screener determines the battery's condition based on specific voltage change values, identifying normal and defective states effectively.

Career Highlights

Se Hwan Moon is currently employed at Samsung SDI Co., Inc., where he continues to develop advanced battery technologies. His work focuses on improving battery performance and safety, which is crucial in today's technology-driven world.

Collaborations

He collaborates with talented coworkers, including Joo Young Go and Tae Ho Kwon, who contribute to the innovative projects at Samsung SDI Co., Inc. Their teamwork fosters a creative environment that drives technological advancements.

Conclusion

Se Hwan Moon's contributions to battery technology exemplify the importance of innovation in enhancing product safety and performance. His work is a testament to the impact of dedicated inventors in the field of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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