Se Hwan Ahn

Title: Se Hwan Ahn: Innovator in Vertically Structured LEDs

Introduction

Se Hwan Ahn is a prominent inventor based in Seoul, South Korea. He is known for his innovative contributions to the field of light-emitting diodes (LEDs). His work focuses on enhancing the manufacturing processes of vertically structured LEDs, which are crucial for various applications in modern technology.

Latest Patents

Se Hwan Ahn holds a patent for a "Method for manufacturing vertically structured light emitting diode." This patent describes a method that simplifies the chip separation process in LED manufacturing. The process involves forming a light-emitting structure on a growth substrate that contains multiple device regions and at least one device isolation region. The structure includes an n-type clad layer, an active layer, and a p-type clad layer, all arranged sequentially on the substrate. A p-electrode is formed on this structure, followed by the creation of a first plating layer that connects the device isolation regions. A second plating layer is then patterned on the first layer, and the growth substrate is removed to form an n-electrode on the n-type clad layer.

Career Highlights

Se Hwan Ahn is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to push the boundaries of LED technology. His innovative methods have the potential to significantly improve the efficiency and performance of LED devices.

Collaborations

He has collaborated with notable colleagues, including Hae Yeon Hwang and Yung Ho Ryu, who share his passion for advancing LED technology.

Conclusion

Se Hwan Ahn's contributions to the field of vertically structured LEDs exemplify his commitment to innovation and excellence. His patent reflects a significant advancement in manufacturing techniques, which could lead to more efficient and effective LED applications in the future.