The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Oct. 03, 2006
Hae Yeon Hwang, Kyungki-do, KR;
Yung Ho Ryu, Seoul, KR;
Da MI Shim, Kyungki-do, KR;
SE Hwan Ahn, Seoul, KR;
Hae Yeon Hwang, Kyungki-do, KR;
Yung Ho Ryu, Seoul, KR;
Da Mi Shim, Kyungki-do, KR;
Se Hwan Ahn, Seoul, KR;
Samsung Electro-Mechanics Co., Ltd., Kyungki-Do, KR;
Abstract
There is provided a method for manufacturing a vertically structured LED capable of performing a chip separation process with ease. In the method, a light-emitting structure is formed on a growth substrate having a plurality of device regions and at least one device isolation region, wherein the light-emitting structure has an n-type clad layer, an active layer and a p-type clad layer which are disposed on the growth substrate in sequence. A p-electrode is formed on the light-emitting structure. Thereafter, a first plating layer is formed on the p-electrode such that it connects the plurality of device isolation regions. A pattern of a second plating layer is formed on the first plating layer of the device region. The growth substrate is removed, and an n-electrode is then formed on the n-type clad layer.