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For the Inventor, By the Inventor

Andover, MA, United States of America

Scott W Duncan

This inventor holds 20 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Luminus Devices, Inc., Opel, Inc., University of Connecticut. Active years: 2005-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Scott W Duncan. Retrieved from https://idiyas.com/inventor/scott-w-duncan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 85.0

 

Average Co-Inventor Count = 3.2

ph-index = 8

Forward Citations = 262(Granted Patents)


Company Filing History:

goldMedal14 out of 85 
 
Luminus Devices, Inc.
 patents
silverMedal6 out of 23 
 
Opel, Inc.
 patents
bronzeMedal6 out of 785 
 
University of Connecticut
 patents
where one patent can have more than one assignee

Years Active: 2005-2020

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Areas of Expertise:
Electronic Device Contact Structures
Wavelength Converting Materials
Light-Emitting Diodes
Selective Wet Etching
Textured Surface Planarization
Modulation Doped Quantum Wells
Accurate Contact Formation
Multi-Layer Light Emitting Devices
Semiconductor Laser Arrays
Fabrication Methods
Device Performance
Deposition Techniques
20 patents (USPTO):Explore Patents
1. 10593835 - Electronic device contact structures (2020-03-17),
2. 10403785 - Wavelength converting material deposition methods and associated articles (2019-09-03),
3. 9627582 - Light-emitting diode architectures for enhanced performance (2017-04-18),
4. 9558954 - Selective wet etching and textured surface planarization processes (2017-01-31),
5. D777121 - LED package (2017-01-24),
6. 9147816 - Wavelength converting material deposition methods and associated articles (2015-09-29),
7. 8872217 - Electronic device contact structures (2014-10-28),
8. 7799585 - Light emitting device methods (2010-09-21),
9. 7776753 - Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (2010-08-17),
10. 7598531 - Electronic device contact structures (2009-10-06),
11. 7556976 - Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (2009-07-07),
12. 7521273 - Light emitting device methods (2009-04-21),
13. 7344903 - Light emitting device processes (2008-03-18),
14. 7341880 - Light emitting device processes (2008-03-11),
15. 7173293 - Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation (2007-02-06),

Title: Scott W Duncan - The Innovative Mind from Andover

Introduction: Scott W Duncan is a renowned inventor hailing from Andover, MA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Scott W Duncan's latest patents include cutting-edge advancements in artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a better future through innovation.

Career Highlights: With a career spanning over two decades, Scott W Duncan has established himself as a pioneer in the tech industry, with numerous successful inventions that have revolutionized the way we interact with technology on a daily basis.

Collaborations: Throughout his career, Scott W Duncan has collaborated with leading tech companies, research institutions, and universities to bring his innovative ideas to life. His collaborative spirit has led to the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: Scott W Duncan's passion for innovation and his relentless pursuit of technological advancement have solidified his position as a visionary inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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