Fort Collins, CO, United States of America

Scott H Cravens


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: **Inventor Spotlight: Scott H. Cravens**

Introduction

Scott H. Cravens, an innovative inventor based in Fort Collins, Colorado, has made significant contributions to the field of semiconductor technology. His work has led to the development of a unique patent that enhances the manufacturing processes in the semiconductor industry.

Latest Patents

Scott H. Cravens holds a patent for a groundbreaking technology titled "Two Mask Technique for Planarized Trench Oxide Isolation of Integrated Circuits." This patent describes a two-mask process used for forming dielectrically filled planarized trenches of arbitrary width within a semiconductor substrate. The first mask defines the active regions while subdividing the trench isolation regions into a succession of trench and plateau regions. The dimensional constraints driven by photolithographic precision are crucial for achieving a substantially void-free trench dielectric. This innovation allows for a planar topology of the dielectric on the substrate surface, ensuring improved functionality in integrated circuits.

Career Highlights

Throughout his career, Scott has been associated with NCR Corporation, where he has played a pivotal role in advancing semiconductor manufacturing techniques. His expertise in photolithography and dielectric materials has been instrumental in refining processes that are essential in modern electronics. The successful execution of his patent is just one of the highlights of his impactful career in the tech industry.

Collaborations

Scott has collaborated with talented individuals such as Daniel L. Ellsworth and Maurice M. Moll. These partnerships have fostered a rich environment for innovation and have led to the development of improved techniques and processes within their field. Working alongside such esteemed colleagues has allowed Scott to enhance his research and contribute significantly to their collective success.

Conclusion

In summary, Scott H. Cravens is a notable inventor whose patent for the two-mask technique in semiconductor processing exemplifies his commitment to innovation. His collaboration with fellow professionals and contributions to NCR Corporation highlight his impact on the technology landscape. As semiconductor technology continues to evolve, Scott's work will undoubtedly play a crucial role in shaping the future of integrated circuit manufacturing.

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