Jordan, NY, United States of America

Scott F Grimshaw

This inventor holds 1 USPTO granted patent. Top assignee: The Standard Oil Company. Active years: 1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Scott F Grimshaw. Retrieved from https://idiyas.com/inventor/scott-f-grimshaw-owv1mv6f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: Scott F Grimshaw: Innovator in Amorphous Semiconductor Films

Introduction

Scott F Grimshaw is a notable inventor based in Jordan, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to the deposition of amorphous semiconductor films. His work has implications for various applications in electronics and materials science.

Latest Patents

Grimshaw holds a patent for a process titled "Dual ion beam deposition of amorphous semiconductor films." This sputtering process efficiently prepares amorphous semiconducting films while reducing the number of localized states. The inventive process allows for the preparation of hydrogenated semiconductor films that are free of polyhydrides. In this process, a silicon target is bombarded by separate beams of heavy sputtering ions, such as argon ions, and ions that passivate localized states, such as hydrogen ions. The resulting products are collected on substrates to form a passivated amorphous semiconductor film. This innovative approach can also be applied to semiconductor alloys and allows for the doping of films during deposition.

Career Highlights

Grimshaw's career is marked by his work at The Standard Oil Company, where he has contributed to advancements in semiconductor technology. His expertise in sputtering processes has positioned him as a key figure in the development of new materials for electronic applications.

Collaborations

Throughout his career, Grimshaw has collaborated with notable colleagues, including David A Glocker and John R Miller. These collaborations have further enhanced his research and development efforts in the field of semiconductor technology.

Conclusion

Scott F Grimshaw's innovative work in the deposition of amorphous semiconductor films showcases his significant contributions to the field of electronics. His patent reflects a deep understanding of materials science and has the potential to influence future advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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