Scott Bowden

Title: Scott Bowden - Innovator in Semiconductor Fabrication

Introduction

Scott Bowden is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of unique fabrication methods that enhance the efficiency of semiconductor devices.

Latest Patents

Scott Bowden holds a patent for a "Mask diffusion process for forming Zener diode or complementary field." This patent describes a unique fabrication method that allows the formation of regions of opposite conductivity types in a semiconductor substrate utilizing a single masking step. A first mask is formed on the surface of the semiconductor substrate and patterned to define the regions that are to be doped to a first conductivity type. After doping these first regions, a protective layer is formed over them. The mask is then removed, exposing the regions that are to be doped to the second conductivity type, which is opposite to the first. These exposed regions are then doped to the opposite conductivity type, while the first regions remain protected by the protective layer. This innovative process simplifies the fabrication of semiconductor devices.

Career Highlights

Scott Bowden is currently employed at American Microsystems, Inc. His work at this company has allowed him to further develop his expertise in semiconductor fabrication. He has been instrumental in advancing the technology used in the production of semiconductor devices.

Collaborations

Scott has collaborated with Tarsaim L Batra, a fellow innovator in the field. Their partnership has contributed to the development of advanced semiconductor technologies.

Conclusion

Scott Bowden's contributions to semiconductor fabrication through his innovative patent demonstrate his commitment to advancing technology in this field. His work continues to influence the development of efficient semiconductor devices.