Sayak Dutta Gupta

Title: Sayak Dutta Gupta: Innovator in High Electron Mobility Transistors

Introduction

Sayak Dutta Gupta is a prominent inventor based in Bengaluru, India. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work has the potential to enhance the performance of electronic devices.

Latest Patents

Sayak Dutta Gupta holds a patent for an enhancement mode high electron mobility transistor (HEMT). The patent describes an improved enhancement mode field effect transistor (FET) that utilizes an oxide (AlTiO) to emulate a p-type gate. This novel HEMT structure incorporates AlTiO Gate Oxide Engineering as a replacement for the traditional p-GaN gate. The design features a hybrid gate stack that combines p-GaN technology with the proposed oxide for enhanced mode operation. The HEMT structure allows for threshold voltage tuning from negative to positive by adjusting the p-doping composition. The developed p-type oxide enables the e-mode device to exhibit an ON current of approximately 400 mA/mm, a sub-threshold slope of 73 mV/dec, a resistance of 8.9 Ωmm, an interface trap density of less than 10 meV, and gate leakage below 200 nA/mm at the OFF-state breakdown.

Career Highlights

Sayak Dutta Gupta is affiliated with the Indian Institute of Science, where he conducts research and development in semiconductor technologies. His work has garnered attention for its innovative approach and practical applications in the electronics industry.

Collaborations

He has collaborated with notable colleagues, including Mayank Shrivastava and Ankit Soni, to advance research in the field of high electron mobility transistors.

Conclusion

Sayak Dutta Gupta's contributions to the development of enhancement mode HEMTs represent a significant advancement in semiconductor technology. His innovative approach and collaborative efforts continue to influence the field positively.