Kanagawa, Japan

Satoshi Oya


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Satoshi Oya: Innovator in Plasma Processing Technology

Introduction

Satoshi Oya is a notable inventor based in Kanagawa, Japan. He has made significant contributions to the field of plasma processing technology, particularly in the semiconductor industry. His innovative work has led to the development of a unique method and apparatus for processing workpieces using plasma.

Latest Patents

Oya holds a patent for a "Method of and apparatus for processing a workpiece in plasma." This invention involves an electron cyclotron resonance plasma chemical vapor deposition system. The system features a reaction chamber designed to introduce a reaction gas, which houses a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide, generating and introducing microwaves to produce plasma. This plasma activates the reaction gas to etch or deposit a film on the semiconductor wafer. Additionally, a pair of upper and lower coils generates magnetic fields in opposite directions, creating a region with substantially no flux density between the coils. A bias voltage is applied to the table to attract the plasma uniformly.

Career Highlights

Satoshi Oya is associated with Tokyo Ohka Kogyo Co., Ltd., a company known for its advancements in chemical products and materials for the semiconductor industry. His work has been instrumental in enhancing the efficiency and effectiveness of plasma processing techniques.

Collaborations

Oya has collaborated with notable colleagues, including Kazuto Obuchi and Mitsuaki Minato. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Satoshi Oya's innovative contributions to plasma processing technology have made a significant impact on the semiconductor industry. His patent and collaborative efforts continue to influence advancements in this critical field.

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