Mohka, Japan

Satoshi Nakatsuka

This inventor holds 1 USPTO granted patent. Top assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha. Active years: 1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Nakatsuka. Retrieved from https://idiyas.com/inventor/satoshi-nakatsuka-lhedtaay

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: The Innovations of Satoshi Nakatsuka

Introduction

Satoshi Nakatsuka is a notable inventor based in Mohka, Japan. He has made significant contributions to the field of magnet technology. His innovative work has led to the development of a unique patent that showcases his expertise.

Latest Patents

Satoshi Nakatsuka holds a patent for a "Multipolarly Magnetized Magnet." This invention represents a significant advancement in magnet technology, demonstrating his ability to create solutions that address complex challenges in the field.

Career Highlights

Satoshi Nakatsuka is currently employed at Kanegafuchi Kagaku Kogyo Kabushiki Kaisha. His role at this company allows him to further explore his passion for innovation and contribute to the development of cutting-edge technologies.

Collaborations

Throughout his career, Satoshi has collaborated with talented individuals such as Takashi Sakauchi and Fumihiko Mohri. These partnerships have enriched his work and fostered a collaborative environment for innovation.

Conclusion

Satoshi Nakatsuka's contributions to the field of magnet technology are noteworthy. His patent for the multipolarly magnetized magnet exemplifies his innovative spirit and dedication to advancing technology. His collaborations and career at Kanegafuchi Kagaku Kogyo Kabushiki Kaisha further highlight his impact in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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