Kawasaki, Japan

Satoshi Katagiri

This inventor holds 1 USPTO granted patent. Top assignee: Nec Corporation. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Katagiri. Retrieved from https://idiyas.com/inventor/satoshi-katagiri-nfrzn74q

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 74(Granted Patents)


Company Filing History:


Years Active: 2002

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1 patent (USPTO):Explore Patents

Title: Satoshi Katagiri: Innovator in Nonvolatile Semiconductor Memory Devices

Introduction

Satoshi Katagiri is a prominent inventor based in Kawasaki, Japan. He is known for his significant contributions to the field of semiconductor technology. His innovative work has led to the development of a nonvolatile semiconductor memory device that enhances data storage efficiency.

Latest Patents

Satoshi Katagiri holds a patent for a nonvolatile semiconductor memory device. This device is designed to minimize excessive writing or verification operations, focusing only on the necessary writing and verification processes. The data is organized in a specific order, allowing for efficient data management and storage.

Career Highlights

Satoshi Katagiri is currently employed at NEC Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of nonvolatile memory devices, making them more reliable and efficient.

Collaborations

Satoshi collaborates with Naoaki Sudo, a fellow innovator in the field. Together, they work on projects that aim to improve semiconductor technology and its applications.

Conclusion

Satoshi Katagiri's contributions to the field of semiconductor memory devices highlight his role as a key innovator. His patent reflects a commitment to enhancing data storage solutions, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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