Tokushima, Japan

Satoshi Kanba

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Waseda University. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Kanba. Retrieved from https://idiyas.com/inventor/satoshi-kanba

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2012

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Journey of Satoshi Kanba

Introduction: Satoshi Kanba, a visionary inventor hailing from Tokushima, Japan, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Satoshi Kanba's latest patents include a cutting-edge virtual reality device that has revolutionized the gaming industry, as well as a sustainable energy solution that aims to tackle environmental challenges.

Career Highlights: With a career spanning over two decades, Satoshi Kanba has established himself as a pioneer in the tech world. His work has not only garnered international acclaim but has also improved the lives of many through his innovative creations.

Collaborations: Throughout his career, Satoshi Kanba has collaborated with leading tech companies, research institutions, and universities to further push the boundaries of innovation. His collaborative spirit has led to the development of cutting-edge technologies that have shaped the industry.

Conclusion: Satoshi Kanba's relentless pursuit of innovation and his passion for creating technologies that make a difference have solidified his position as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…