Nagoya, Japan

Satoshi Kamiyama

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Kamiyama. Retrieved from https://idiyas.com/inventor/satoshi-kamiyama-0lqajocp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Satoshi Kamiyama: Innovator in Semiconductor Technology

Introduction

Satoshi Kamiyama is a notable inventor based in Nagoya-shi, Aichi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor that incorporates advanced features.

Latest Patents

Kamiyama holds a patent for a semiconductor and method of semiconductor fabrication. This invention discloses a semiconductor that includes one or more luminescent layers and one or more electron gas layers. The design features two-dimensional electron gases that are distributed parallel to the luminescent layers, enhancing the performance of the semiconductor.

Career Highlights

Throughout his career, Satoshi Kamiyama has focused on advancing semiconductor technology. His work has been recognized for its potential applications in various electronic devices. He has demonstrated a commitment to innovation and excellence in his field.

Collaborations

Kamiyama has collaborated with esteemed colleagues, including Hiroshi Amano and Isamu Akasaki. These partnerships have contributed to the advancement of semiconductor research and development.

Conclusion

Satoshi Kamiyama is a prominent figure in semiconductor innovation, with a patent that showcases his expertise and creativity. His contributions continue to influence the field and inspire future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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