Kameyama, Japan

Satoshi Ihida

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Sharp Display Technology Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoshi Ihida. Retrieved from https://idiyas.com/inventor/satoshi-ihida-z7riw4yf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Satoshi Ihida: Cell Culture Substrate Innovation

Introduction

Satoshi Ihida is an inventor associated with Kameyama, Japan, and Sharp Display Technology Corporation. His work includes a patented cell culture substrate design intended to support cell culture applications.

Latest Patents

Ihida is credited with 1 patent: “Cell Culture Substrate and Cell Culture Scaffold Kit.” The invention describes a substrate with a base and two segments on one surface. The first segment is made of an inorganic material, while the second is made of metal and has relatively higher surface free energy. The metal segment is arranged so that its share of the combined area of both segments increases gradually along a direction across the surface.

Career Highlights

The available information identifies Ihida’s work with Sharp Display Technology Corporation and documents his contribution to the cell culture substrate patent. The patent’s graded arrangement of materials is a central feature of the disclosed design.

Collaborations

Chihiro Tachino and Takeshi Hara are identified as Ihida’s coworkers. The provided information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Satoshi Ihida’s documented patent work centers on a cell culture substrate that combines inorganic and metal segments in a graded surface arrangement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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