Gifu, Japan

Satoru Ogasawara

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satoru Ogasawara. Retrieved from https://idiyas.com/inventor/satoru-ogasawara-75c2rfrm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Satoru Ogasawara: Innovator in Gas Cluster Formation

Introduction

Satoru Ogasawara is a notable inventor based in Gifu, Japan. He has made significant contributions to the field of material science, particularly in the area of gas cluster formation. His innovative work has led to the development of methods that are essential for various applications in thin film technology.

Latest Patents

Satoru Ogasawara holds a patent for a "Method for forming gas cluster and method for forming thin film." This patent showcases his expertise in creating advanced materials through innovative techniques. The patent is a testament to his commitment to pushing the boundaries of technology.

Career Highlights

Throughout his career, Ogasawara has demonstrated a strong dedication to research and development. His work has not only advanced scientific understanding but has also paved the way for practical applications in various industries. His innovative spirit continues to inspire those around him.

Collaborations

Satoru Ogasawara has collaborated with talented individuals such as Makoto Akizuki and Mitsuaki Harada. These partnerships have fostered a creative environment that encourages the exchange of ideas and the pursuit of groundbreaking innovations.

Conclusion

Satoru Ogasawara is a distinguished inventor whose work in gas cluster formation and thin film technology has made a lasting impact. His contributions to the field exemplify the importance of innovation in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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