Company Filing History:
Years Active: 2017
Title: Innovations by SankaraRao Kunapareddy
Introduction
SankaraRao Kunapareddy is a notable inventor based in San Diego, CA. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. With a total of 2 patents, his work focuses on enhancing the efficiency and functionality of DRAM systems.
Latest Patents
One of his latest patents is titled "DRAM access in self-refresh state." This invention addresses the challenge of accessing a DRAM system while it is in a self-refresh state. The DRAM controller is designed to determine when a DRAM bank is in this state and allows commands to access the bank without exiting the self-refresh mode. The selection of these commands can depend on various factors, including clock frequency and traffic conditions. The commands may include read (RD), write (WR), or precharge (PRE) commands.
Another significant patent by Kunapareddy is "Controlling a refresh mode of a dynamic random access memory (DRAM) die." This invention configures an inactive portion of a DRAM die to operate in a self-refresh mode, controlled by a local DRAM die controller. Meanwhile, the active portion operates under a controller-managed refresh mode, enhancing the overall efficiency of the DRAM system.
Career Highlights
SankaraRao Kunapareddy is currently employed at Qualcomm Incorporated, a leading technology company known for its innovations in telecommunications and semiconductor technology. His work at Qualcomm has allowed him to contribute to cutting-edge advancements in memory technology.
Collaborations
Throughout his career, Kunapareddy has collaborated with talented individuals such as Mosaddiq Saifuddin and Keunsoo Roh. These collaborations have fostered an environment of innovation and creativity, leading to the development of impactful technologies.
Conclusion
SankaraRao Kunapareddy's contributions to DRAM technology through his patents demonstrate his expertise and commitment to innovation. His work continues to influence the field, paving the way for future advancements in memory systems.