Suwon, South Korea

Sangyeon Pak

This inventor holds 1 USPTO granted patent. Top assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sangyeon Pak. Retrieved from https://idiyas.com/inventor/sangyeon-pak-opdnooji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: The Innovations of Sangyeon Pak

Introduction

Sangyeon Pak is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of transparent conductive films. His work has implications for various electronic devices, enhancing their performance and efficiency.

Latest Patents

Sangyeon Pak holds a patent for a transparent conductive film, which includes a metal chalcogenide compound doped with a halogen. This innovative film has a sheet resistance at room temperature of less than or equal to about 60 ohm/sq. This advancement is crucial for the manufacturing of thin film transistors and devices that incorporate such films.

Career Highlights

Throughout his career, Sangyeon Pak has worked with prominent organizations, including Samsung Electronics Co., Ltd. and Sungkyunkwan University. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Some of his notable coworkers include Younhee Lim and Jiwon Son. Their collaborative efforts have furthered the development of innovative technologies in the realm of transparent conductive materials.

Conclusion

Sangyeon Pak's contributions to the field of transparent conductive films exemplify the importance of innovation in technology. His work not only enhances electronic devices but also paves the way for future advancements in materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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