Daejeon, South Korea

Sanguck Lee

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Lg Chem, Ltd. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sanguck Lee. Retrieved from https://idiyas.com/inventor/sanguck-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2018

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Sanguck Lee: Inventor in Lithium-Ion Battery Materials.

Introduction

Sanguck Lee is an inventor based in Daejeon, South Korea, and is associated with LG Chem, Ltd. His patent work concerns lithium manganese oxide cathode materials designed to support charge-discharge performance across multiple voltage ranges.

Latest Patents

The provided information lists one patent for Sanguck Lee: “Cathode Active Material Comprising Lithium Manganese Oxide Capable of Providing Excellent Charge-Discharge Characteristics at 3V Region as Well as 4V Region.” The invention describes lithium manganese oxide with a spinel structure and a specified composition. A conductive material is applied to the particle surfaces to enable charge-discharge properties in the 2.5–3.5 V range as well as in the 4 V region. The listed patent count is 1 patent.

Career Highlights

Lee’s listed invention focuses on cathode active materials for batteries, particularly improving performance across different voltage regions. The supplied information identifies LG Chem, Ltd. as the company where he works.

Collaborations

The provided information names Sin Kyu Kim and Geun-Chang Chung as Lee’s coworkers. Their specific roles in the listed patent or other projects are not specified.

Conclusion

Sanguck Lee’s listed patent reflects work on lithium manganese oxide cathode materials intended to deliver charge-discharge performance across both 3 V and 4 V regions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…