Suwon-si, South Korea

Sangsik Park

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sangsik Park. Retrieved from https://idiyas.com/inventor/sangsik-park-ss5q59bn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 25.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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4 patents (USPTO):Explore Patents

Title: Innovations by Sangsik Park

Introduction

Sangsik Park is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of electronics, particularly through his work at Samsung Electronics Ltd. With a total of 4 patents to his name, Park has demonstrated his innovative capabilities in developing electronic devices.

Latest Patents

Among his latest patents, Sangsik Park has developed a case for electronic devices, showcasing his focus on enhancing user experience and device protection. His work on electronic devices reflects the cutting-edge technology that Samsung is known for, contributing to the advancement of the industry.

Career Highlights

Throughout his career at Samsung Electronics Ltd., Sangsik Park has been involved in various projects that push the boundaries of technology. His role in the company has allowed him to work on innovative solutions that cater to the evolving needs of consumers.

Collaborations

Sangsik Park has collaborated with talented coworkers such as Saewon Kwon and Namkyu Kim. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Sangsik Park's contributions to the field of electronics through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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