Daejeon, South Korea

Sangin Bae

This inventor holds 1 USPTO granted patent and 6 published patent applications and 1 EPO patent. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sangin Bae. Retrieved from https://idiyas.com/inventor/sangin-bae

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Sangin Bae in Lens Technology.

Introduction

Sangin Bae is a notable inventor based in Daejeon, South Korea. He has made significant contributions to the field of lens technology, particularly through his innovative patent. His work focuses on enhancing light absorbance and minimizing optical crosstalk in lens structures.

Latest Patents

Sangin Bae holds a patent for a lens structure and its manufacturing method. This invention involves a multilayered aperture composed of a metal layer, dielectric layer, and another metal layer stacked vertically. The design includes pore patterns on both metal layers, serving as an aperture for a microlens array. This innovative approach aims to improve the performance of optical devices.

Career Highlights

Sangin Bae is affiliated with the Korea Advanced Institute of Science and Technology, where he continues to advance his research and development in optical technologies. His work has garnered attention for its potential applications in various fields, including telecommunications and imaging systems.

Collaborations

Sangin Bae collaborates with Ki-Hun Jeong, contributing to the advancement of lens technology and related research projects.

Conclusion

Sangin Bae's innovative work in lens technology exemplifies the impact of research and development in enhancing optical performance. His contributions are paving the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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