Santa Clara, CA, United States of America

Sanghyuk Choi

This inventor holds 1 USPTO granted patent. Top assignee: Lam Research Corporation. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sanghyuk Choi. Retrieved from https://idiyas.com/inventor/sanghyuk-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Sanghyuk Choi: Semiconductor Etch Chemistry Inventor.

Introduction

Sanghyuk Choi is an inventor based in Santa Clara, California, and is associated with Lam Research Corporation. His work includes a patent focused on etch chemistry for controlling distortion and bowing during high-aspect-ratio etching.

Latest Patents

Choi is named on 1 patent: “Sulfur and Fluorine Containing Etch Chemistry for Improvement of Distortion and Bow Control for HAR Etch.” The disclosure describes a method for etching features through alternating layers in a stack above a substrate. It uses a plasma formed from an etching gas containing a sulfur-and-fluorine molecule, a carbon-, fluorine-, and hydrogen-containing molecule, and a carbon-and-fluorine molecule without hydrogen. The method is intended to improve distortion and bow control during high-aspect-ratio etching.

Career Highlights

Choi’s patent reflects work on plasma-based etching processes used to form features in layered semiconductor structures. The disclosed chemistry combines multiple gas molecules to support etching through alternating layers.

Collaborations

The provided information lists Joseph James Vegh and Kyeong-Koo Chi as Choi’s coworkers. They are also associated with the patent disclosure.

Conclusion

Sanghyuk Choi’s patent contribution centers on sulfur- and fluorine-containing etch chemistry designed to improve feature control in high-aspect-ratio semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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