Daegu, South Korea

Sanghyuck Ahn

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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12 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Sanghyuck Ahn

Introduction

Sanghyuck Ahn is a prominent inventor based in Daegu, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on enhancing the performance and efficiency of semiconductor memory devices and integrated circuit devices.

Latest Patents

Among his latest patents is a method of fabricating a semiconductor memory device. This invention includes a capacitor with a bottom electrode and a top electrode, a dielectric layer situated between these electrodes, and an interface layer that incorporates a metal oxide and an additional constituent at the grain boundary. Another notable patent is for integrated circuit devices and methods of manufacturing the same. This invention features a capacitor structure that includes a bottom electrode over a substrate, a supporter on the sidewall of the bottom electrode, a dielectric layer, and a top electrode that covers the bottom electrode. The bottom electrode is composed of a base electrode layer and a conductive capping layer made of niobium nitride.

Career Highlights

Sanghyuck Ahn is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His innovative work has contributed to advancements in semiconductor technology, making significant impacts on the industry.

Collaborations

He has collaborated with notable coworkers, including Jungoo Kang and Gihee Cho, who have also contributed to the field of semiconductor technology.

Conclusion

Sanghyuck Ahn's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the industry. His inventions continue to influence advancements in electronic devices and memory technologies.

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